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STN2222ASF PDF预览

STN2222ASF

更新时间: 2024-11-16 08:59:19
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 287K
描述
NPN Silicon Transistor

STN2222ASF 数据手册

 浏览型号STN2222ASF的Datasheet PDF文件第2页浏览型号STN2222ASF的Datasheet PDF文件第3页浏览型号STN2222ASF的Datasheet PDF文件第4页 
STN2222ASF  
NPN Silicon Transistor  
Descriptions  
PIN Connection  
General purpose application  
3
Switching application  
1
Features  
Large collector current  
2
SOT-23F  
Low collector saturation voltage  
Complementary pair with STN2907ASF  
Ordering Information  
Type NO.  
Marking  
Package Code  
XA  
STN2222ASF  
SOT-23F  
Device Code Year&Week Code  
Absolute Maximum Ratings  
Characteristic  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
40  
V
5
V
Collector current  
600  
mA  
mW  
°C  
*
Collector power dissipation  
Junction temperature  
Storage temperature range  
PC  
350  
Tj  
150  
Tstg  
-55~150  
°C  
* : Package mounted on 99.5% Alumina 10×8×0.1  
Electrical Characteristics  
(Ta=25°C)  
Characteristic  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Symbol  
Test Condition  
Min. Typ. Max. Unit  
BVCBO  
BVCEO  
BVEBO  
ICBO  
IC=10μA, IE=0  
60  
40  
5
-
-
-
-
-
-
-
V
V
IC=10mA, IB=0  
IE=10μA, IC=0  
-
V
VCB=60V, IE=0  
-
10  
450  
0.4  
-
nA  
-
DC current gain  
hFE  
VCE=10V, IC=10mA  
IC=150mA, IB=15mA  
VCE=20V, IC=20mA  
VCB=10V, IE=0, f=1MHz  
75  
-
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
250  
-
-
MHz  
pF  
Collector output capacitance  
Cob  
6.0  
-
KSD-T5C046-001  
1

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