STN2907AEF

更新时间： 2024-10-02 08:59:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
4页	263K
描述
PNP Silicon Transistor

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中文翻译

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数据手册

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STN2907AEF 数据手册

STN2907AEF

PNP Silicon Transistor

Descriptions

PIN Connection

• General purpose application

• Switching application

Features

• Large collector current

• Low collector saturation voltage

SOT-523F

Ordering Information

Type NO.

Marking

Package Code

①

STN2907AEF

SOT-523F

②

①Device Code ② Year&Week Code

Absolute Maximum Ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

-55

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

-50

-5

Collector current

-600

150

°C

Collector Power dissipation

Junction temperature

Storage temperature range

P_C

T_j

T_stg

-55~150

°C

* : Package mounted on 99.5% Alumina 10×8×0.1mm.

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Emitter breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

BV_CEO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=-10mA, I_B=0

-50

-10

V_CB=-55V, I_E=0

I_EBO

V_EB=-5V, I_E=0

DC current gain

h_FE

V_CE=-10V, I_C=-10mA

I_C=-150mA, I_B=-15mA

V_CE=-5V, I_C=-20mA

V_CB=-10V, I_E=0, f=1MHz

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.4

250

MHz

Collector output capacitance

C_ob

6.0

KSD-T5E002-001

12 3 4

中文翻译

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