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STN2222SF PDF预览

STN2222SF

更新时间: 2024-11-16 08:59:19
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 273K
描述
NPN Silicon Transistor

STN2222SF 数据手册

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STN2222SF  
NPN Silicon Transistor  
Description  
PIN Connection  
General purpose application  
Switching application  
3
Features  
Large collector current  
1
2
Low collector saturation voltage  
Complementary pair with STN2907SF  
SOT-23F  
Ordering Information  
Type NO.  
Marking  
HA  
Package Code  
STN2222SF  
SOT-23F  
Device Code Year&Week Code  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
60  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
Collector current  
V
V
30  
5
V
600  
mA  
mW  
°C  
*
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
350  
Tj  
150  
Tstg  
-55~150  
°C  
* : Package mounted on 99.5% Alumina 10×8×0.1  
Electrical Characteristics  
(Ta=25°C)  
Characteristic  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
Symbol  
Test Condition  
Min. Typ. Max. Unit  
BVCBO  
BVCEO  
BVEBO  
ICBO  
IC=10μA, IE=0  
60  
30  
5
-
-
-
-
-
-
-
V
V
IC=10mA, IB=0  
IE=10μA, IC=0  
-
V
VCB=60V, IE=0  
-
10  
nA  
-
DC current gain  
hFE  
VCE=10V, IC=10mA  
IC=150mA, IB=15mA  
VCE=20V, IC=20mA  
VCB=10V, IE=0, f=1MHz  
75  
-
Collector-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
0.4  
V
250  
-
-
-
-
MHz  
pF  
Collector output capacitance  
Cob  
6.0  
KSD-T5C078-000  
1

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