Datasheet > STL7N80K5

STL7N80K5

更新时间： 2024-11-28 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	890K
描述
N沟道800 V、0.95 Ohm典型值、3.6 A MDmesh K5功率MOSFET，PowerFLAT 5x6 VHV封装

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STL7N80K5 数据手册

STL7N80K5

N-channel 800 V, 0.95 Ω typ., 3.6 A MDmesh™ K5

Power MOSFET in a PowerFLAT™ 5x6 VHV package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STL7N80K5

800 V

1.2 Ω

3.6 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

PowerFLAT™ 5x6 VHV

Applications

Figure 1: Internal schematic diagram



Switching applications

D(5, 6, 7, 8)

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

G(4)

Top View

S(1, 2, 3)

Table 1: Device summary

Package

Order code

STL7N80K5

Marking

Packing

7N80K5

PowerFLAT™ 5x6 VHV

Tape and reel

July 2017

DocID025551 Rev 2

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

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