Datasheet > STL8N6LF6AG

STL8N6LF6AG

更新时间： 2024-11-28 14:57:59

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意法半导体 - STMICROELECTRONICS		/
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描述
汽车级N沟道60 V、21 mOhm典型值、32 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

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STL8N6LF6AG 数据手册

STL8N6LF6AG

Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™

F6 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

P_TOT

STL8N6LF6AG 60 V

27 mΩ

32 A 55 W



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Wettable flank package

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

Table 1: Device summary

Order code

Marking

8N6LF6

Package

Packing

STL8N6LF6AG

PowerFLAT™ 5x6

Tape and reel

January 2016

DocID028068 Rev 2

1/14

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...14

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