Datasheet > STL9N60M2

STL9N60M2

更新时间： 2024-10-03 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	1043K
描述
N沟道600 V、0.76 Ohm典型值、4.8 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

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STL9N60M2 数据手册

STL9N60M2

N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Q_g

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet

production data

Features

Order code V_DS@ T_JmaxR_DS(on)max

STL9N60M2 650 V 0.86 Ω

I_D

4.8 A

• Extremely low gate charge

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

PowerFLAT™ 5x6 HV

• Zener-protected

Applications

• Switching applications

Description

Figure 1. Internal schematic diagram

D(5, 6, 7, 8)

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

G(4)

Top View

S(1, 2, 3)

AM15540v3

Table 1. Device summary

Order code

STL9N60M2

Marking

Package

PowerFLAT™ 5x6 HV

Packaging

9N60M2

Tape and reel

March 2014

DocID025655 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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