Datasheet > STL9P4LF6AG

STL9P4LF6AG

更新时间： 2024-10-03 14:58:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	414K
描述
Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

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STL9P4LF6AG 数据手册

STL9P4LF6AG

Datasheet

Automotive P-channel enhancement mode Power MOSFET STripFET F6

-40 V, -8 A in a PowerFLAT 3.3x3.3 package

Features

DS(on)

max.

Order code

STL9P4LF6AG

-40 V

26 mΩ

-8 A

•

AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Logic level

D(5, 6, 7, 8)

Applications

G(4)

•

Switching applications

Description

S(1, 2, 3)

AM01475v4

This device is a P-channel Power MOSFET developed using the STripFET F6

technology, with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

Product status link

STL9P4LF6AG

Product summary

Order code

Marking

STL9P4LF6AG

9P4LF

Package

Packing

PowerFLAT 3.3x3.3

Tape and reel

DS13399 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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