Datasheet > STL8NH3LL_06

STL8NH3LL_06

更新时间： 2024-10-02 03:30:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
12页	286K
描述
N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

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STL8NH3LL_06 数据手册

STL8NH3LL

N-channel 30V - 0.012Ω - 8A - PowerFLAT™

Ultra low gate charge STripFET™ Power MOSFET

General features

Type

DSS

DS(on)

(1)

STL8NH3LL

30V

<0.015Ω

■ Improved die-to-footprint ratio

■ Very low profile package (1mm max)

■ Very low thermal resistance

■ Very low gate charge

PowerFLAT™(3.3x3.3)

(Chip Scale Package)

■ Low threshold device

■ In compliance with the 2002/95/EC Europen

directive

Description

Internal schematic diagram

This application specific Power MOSFET is the

latest generation of STMicroelectronics unique

“STripFET™” technology. The resulting transistor

is optimized for low on-resistance and minimal

gate charge. The Chip-scaled PowerFLAT™

package allows a significant board space saving,

still boosting the performance.

Applications

■ Switching application

TOP VIEW

Order codes

Sales Type

Marking

Package

Packaging

STL8NH3LL

8NH3L

PowerFLAT™ (3.3 x 3.3)

Tape & reel

March 2006

Rev 7

1/12

www.st.com

12 3 4 5 6 7...12

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