Datasheet > STL86N3LLH6AG

STL86N3LLH6AG

更新时间： 2024-11-25 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	620K
描述
汽车级N沟道30 V、4 mOhm典型值、80 A STripFET H6功率MOSFET，PowerFLAT 5x6封装

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STL86N3LLH6AG 数据手册

STL86N3LLH6AG

Datasheet

Automotive-grade N-channel 30 V, 4 mΩ typ., 80 A STripFET™ H6

Power MOSFET in a PowerFLAT™ 5x6 package

Features

DS(on)

max.

Order code

STL86N3LLH6AG

30 V

5.2 mΩ

80 A

•

AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Logic level

PowerFLAT™ 5x6

D(5, 6, 7, 8)

Wettable flank package

G(4)

Applications

•

Switching applications

Top View

S(1, 2, 3)

AM15540v2

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

Product status link

STL86N3LLH6AG

Product summary

Order code

Marking

STL86N3LLH6AG

86N3LLH6

Package

Packing

PowerFLAT™ 5x6

Tape and reel

DS10615 - Rev 5 - February 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...17

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