Datasheet > STL8DN6LF6AG

STL8DN6LF6AG

更新时间： 2024-11-28 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	399K
描述
汽车级双路N沟道60 V、21 mOhm典型值、32 A STripFET F6功率MOSFET，PowerFLAT 5x6双岛封装

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STL8DN6LF6AG 数据手册

STL8DN6LF6AG

Datasheet

Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET F6

Power MOSFET in a PowerFLAT 5x6 DI package

Features

DS(on)

max.

TOT

Order code

STL8DN6LF6AG

60 V

27 mΩ

32 A

55 W

•

AEC-Q101 qualified

Very low on-resistance

Very low gate charge

PowerFLAT 5x6

double island

High avalanche ruggedness

Low gate drive power loss

Wettable flank package

D1(7, 8)

D2(5, 6)

Applications

G1(2)

G2(4)

•

Switching applications

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S1(1)

S2(3)

SC12820

Product status link

STL8DN6LF6AG

Product summary

Order code

Marking

STL8DN6LF6AG

8DN6LF6

PowerFLAT 5x6

double island

Package

Packing

Tape and reel

DS11120 - Rev 5 - July 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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