Datasheet > STL8N65M2

STL8N65M2

更新时间： 2024-11-28 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	844K
描述
N沟道650 V、1 Ohm典型值、4 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

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STL8N65M2 数据手册

STL8N65M2

Datasheet

N-channel 650 V, 1 Ω typ., 4 A MDmesh M2 Power MOSFET

in a PowerFLAT 5x6 HV package

Features

max.

Order code

DS(on )

STL8N65M2

650 V

1.25 Ω

4 A

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

PowerFLAT 5x6 HV

Zener-protected

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

Top View

S(1, 2, 3)

AM15540v1

Product status link

STL8N65M2

Product summary

Order code

STL8N65M2

Marking

Package

Packing

8N65M2

PowerFLAT 5x6 HV

Tape and reel

DS13016 - Rev 1 - May 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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