Datasheet > STGAP2GSN

STGAP2GSN

更新时间： 2024-11-20 14:58:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	551K
描述
Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

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STGAP2GSN 数据手册

STGAP2GSN

Datasheet

Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features

•

High voltage rail up to 1700 V

Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V

dV/dt transient immunity ±100 V/ns

Input-output propagation delay: 45 ns

Separate sink and source option for easy gate driving configuration

UVLO function optimized for GaN

Gate driving voltage up to 15 V

3.3 V, 5 V TTL/CMOS inputs with hysteresis

Temperature shut-down protection

Standby function

Narrow body SO-8 package

Application

•

Motor driver for home appliances, factory automation, industrial drives and

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fans.

STGAP2GSN

•

600/1200 V inverters

Wireless chargers

UPS

Product label

Power supply units

DC-DC converters

Power Factor Correction

Description

The STGAP2GSN is a single gate driver which provides isolation between the gate

driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail

outputs, making the device also suitable for mid and high power applications such as

power conversion and motor driver inverters in industrial applications.

The device allows to independently optimize turn-on and turn-off by using dedicated

gate resistors.

The device integrates protection functions including thermal shutdown ans UVLO

with optimized level for Enhancement-mode GaN FETs, which enables easy design

high efficiency and reliable systems. Dual input pins allow the selection of signal

polarity control and implementation of HW interlocking protection to avoid cross-

conduction in case of controller malfunction.

The input to output propagation delay results contained within 45 ns, providing high

PWM control accuracy.

A standby mode is available to reduce idle power consumption.

DS14151 - Rev 1 - December 2022

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...20

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与STGAP2GSN相关器件

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STGAP2HD	STMICROELECTRONICS	获取价格	电气隔离4 A双重栅极驱动器
STGAP2HS	STMICROELECTRONICS	获取价格	Galvanically isolated 4 A single gate driver
STGAP2S	STMICROELECTRONICS	获取价格	电流隔离4 A单重栅极驱动器
STGAP2SICD	STMICROELECTRONICS	获取价格	电流隔离4 A双重栅极驱动器
STGAP2SICS	STMICROELECTRONICS	获取价格	Galvanically isolated 4 A single gate driver for SiC MOSFETs
STGAP2SICSA	STMICROELECTRONICS	获取价格	Galvanically isolated 4 A single gate driver for SiC MOSFETs
STGAP2SICSAN	STMICROELECTRONICS	获取价格	Galvanically isolated 4 A single gate driver for SiC MOSFETs
STGAP2SICSN	STMICROELECTRONICS	获取价格	Galvanically isolated 4 A single gate driver for SiC MOSFETs
STGAP4S	STMICROELECTRONICS	获取价格	Automotive advanced isolated gate driver for IGBTs and SiC MOSFETs
STGB10H60DF	STMICROELECTRONICS	获取价格	600 V、10 A高速沟槽栅场截止H系列IGBT

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