Datasheet > STG8M120F3D7

STG8M120F3D7

更新时间： 2024-11-20 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
10页	432K
描述
1200 V、8 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装

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STG8M120F3D7 数据手册

STG8M120F3D7

1200 V, 8 A trench gate field-stop M series

low-loss IGBT die in D7 packing

Datasheet - production data

Features



10 µs of short-circuit withstand time

Low V_CE(sat)= 1.85 V (typ.) @ I_C= 8 A

Positive V_CE(sat)temperature coefficient

Tight parameter distribution

Maximum junction temperature: T_J= 175 °C

Applications



Motor control

Industrial drives

PFC

UPS

Solar

General purpose inverter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

V_CE

I_CN

Die size

Packing

STG8M120F3D7

1200 V

8 A

3.44 x 3.44 mm²

November 2017

DocID030930 Rev 2

1/10

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...10

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