Datasheet > STFU14N80K5

STFU14N80K5

更新时间： 2024-10-02 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	455K
描述
N沟道800 V、0.400 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-220FP超窄引线封装

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STFU14N80K5 数据手册

STFU14N80K5

Datasheet

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a

TO-220FP ultra narrow leads package

Features

max.

Order code

DS(on )

STFU14N80K5

800 V

0.445 Ω

12 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

TO-220FP

100% avalanche tested

Zener-protected

ultra narrow leads

D(2)

Applications

•

Switching applications

G(1)

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

S(3)

AM15572v1_no_tab

Product status link

STFU14N80K5

Product summary

Order code

Marking

STFU14N80K5

14N80K5

TO-220FP ultra narrow

leads

Package

Packing

Tube

DS12888 - Rev 1 - January 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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