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STB80NF10T4 PDF预览

STB80NF10T4

更新时间: 2024-11-19 21:53:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
11页 309K
描述
N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET

STB80NF10T4 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.51Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180097
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:D2PAK_STD_ST
Samacsys Released Date:2015-11-09 14:24:38Is Samacsys:N
雪崩能效等级(Eas):350 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):210 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB80NF10T4 数据手册

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STP80NF10  
STB80NF10  
N-CHANNEL 100V - 0.012- 80A - TO-220/D2PAK  
LOW GATE CHARGE STripFET™II MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
DSS  
DS(on)  
STB80NF10  
STP80NF10  
100 V  
100 V  
< 0.015  
< 0.015 Ω  
80 A  
80 A  
TYPICAL R (on) = 0.012  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
1
3
2
1
2
D PAK  
DESCRIPTION  
TO-220  
This MOSFET series realized with STMicroelec-  
tronics unique STripFET process has specifically  
been designed to minimize input capacitance and  
gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency isolated DC-DC  
converters for Telecom and Computer application.  
It is also intended for any application with low gate  
charge drive requirements.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
HIGH-EFFICIENCY DC-AC CONVERTERS  
UPS AND MOTOR CONTROL  
Table 2: Order Codes  
SALES TYPE  
STB80NF10T4  
STP80NF10  
MARKING  
B80NF10@  
P80NF10@  
PACKAGE  
PACKAGING  
TAPE & REEL  
TUBE  
2
D PAK  
TO-220  
Rev. 3  
February 2005  
1/11  

STB80NF10T4 替代型号

型号 品牌 替代类型 描述 数据表
STB76NF80 STMICROELECTRONICS

类似代替

80A, 80V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-
FDB3632 FAIRCHILD

功能相似

N-Channel PowerTrench MOSFET 100V, 80A, 9mз

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