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STB80NF55-08 PDF预览

STB80NF55-08

更新时间: 2024-02-16 21:10:32
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 355K
描述
N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET

STB80NF55-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.45雪崩能效等级(Eas):870 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB80NF55-08 数据手册

 浏览型号STB80NF55-08的Datasheet PDF文件第2页浏览型号STB80NF55-08的Datasheet PDF文件第3页浏览型号STB80NF55-08的Datasheet PDF文件第4页浏览型号STB80NF55-08的Datasheet PDF文件第5页浏览型号STB80NF55-08的Datasheet PDF文件第6页浏览型号STB80NF55-08的Datasheet PDF文件第7页 
STP80NF55-08  
STB80NF55-08 STB80NF55-08-1  
2
2
N-CHANNEL 55V - 0.0065 - 80A D PAK/I PAK/TO-220  
STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB80NF55-08/-1  
STP80NF55-08  
55 V  
55 V  
<0.008 Ω  
<0.008 Ω  
80 A  
80 A  
TYPICAL R (on) = 0.0065Ω  
DS  
3
LOW THRESHOLD DRIVE  
3
1
2
1
2
I PAK  
DESCRIPTION  
2
D PAK  
TO-263  
TO-262  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
3
2
1
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
TO-220  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
55  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
55  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
80  
V
GS  
I ()  
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
57  
A
D
C
I
(•)  
Drain Current (pulsed)  
320  
300  
2
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
mJ  
(1)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
870  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
o
(1) Starting T = 25 C, I = 40A, V = 30V  
() Current limited by package  
(•) Pulse width limited by safe operating area.  
j
D
DD  
March 2002  
1/11  
.

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