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STB20NE06L PDF预览

STB20NE06L

更新时间: 2024-11-23 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 86K
描述
N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET

STB20NE06L 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.67
Is Samacsys:N雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB20NE06L 数据手册

 浏览型号STB20NE06L的Datasheet PDF文件第2页浏览型号STB20NE06L的Datasheet PDF文件第3页浏览型号STB20NE06L的Datasheet PDF文件第4页浏览型号STB20NE06L的Datasheet PDF文件第5页浏览型号STB20NE06L的Datasheet PDF文件第6页浏览型号STB20NE06L的Datasheet PDF文件第7页 
STB20NE06L  
N - CHANNEL 60V - 0.06  
- 20A TO-263  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB20NE06L  
60 V  
< 0.07 Ω  
20 A  
TYPICAL RDS(on) = 0.06 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
LOW THRESHOLD DRIVE  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
3
1
D2PAK  
TO-263  
(suffix ”T4”)  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronis unique ”Single Feature Size ”  
strip-based process. The resulting transistor  
shows extremely high packing density for low  
on-resistance, rugged avalance characteristics  
and less critical alignment steps therefore a  
remarkable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
60  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
V
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
20  
A
ID  
14  
A
I
DM()  
80  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
70  
0.47  
W
Derating Factor  
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
7
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 20 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/8  
June 1999  

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