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STB20NM50FD PDF预览

STB20NM50FD

更新时间: 2024-11-01 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 290K
描述
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE

STB20NM50FD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, TO-263, D2PAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.14Is Samacsys:N
雪崩能效等级(Eas):700 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):192 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB20NM50FD 数据手册

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STB20NM50FD  
2
N-CHANNEL 500V - 0.20- 20A D PAK  
FDmesh™Power MOSFET (With FAST DIODE)  
PRELIMINARY DATA  
TYPE  
V
DSS  
R
I
D
DS(on)  
STB20NM50FD  
500V  
< 0.25Ω  
20 A  
TYPICAL R (on) = 0.20Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
1
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
2
D PAK  
DESCRIPTION  
The FDmesh™ associates all advantages of re-  
duced on-resistance and fast switching with an in-  
trinsic fast-recovery body diode. It is therefore  
strongly recommended for bridge topologies, in par-  
ticular ZVS phase-shift converters.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
ZVS PHASE-SHIFT FULL BRIDGE  
CONVERTERS FOR SMPS AND WELDING  
EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
500  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
500  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±30  
V
I
D
Drain Current (continuos) at T = 25°C  
20  
A
C
I
Drain Current (continuos) at T = 100°C  
14  
A
D
C
I
( )  
Drain Current (pulsed)  
80  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
192  
W
C
Derating Factor  
0.88  
6
W/°C  
V/ns  
°C  
°C  
dv/dt  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
November 2001  
1/7  

STB20NM50FD 替代型号

型号 品牌 替代类型 描述 数据表
STB20NM50 STMICROELECTRONICS

完全替代

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