Datasheet > STB210NF02T4

STB210NF02T4

更新时间： 2024-11-01 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
14页	196K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 120A I(D) \| TO-263AB

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STB210NF02T4 数据手册

STP210NF02

STB210NF02 STB210NF02-1

N-CHANNEL 20V - 0.0026 Ω - 120A D PAK/I PAK/TO-220

STripFET II POWER MOSFET

AUTOMOTIVE SPECIFIC

TYPE

DSS

DS(on)

STB210NF02/-1

STP210NF02

20 V

<0.0032 Ω

120 A(**)

■

TYPICAL R (on) = 0.0026Ω

STANDARD THRESHOLD DRIVE

100% AVALANCHE TESTED

I PAK

TO-262

D PAK

TO-263

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique ”Single Feature Size ” strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

remarkable

manufacturing

TO-220

reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

Ordering Information

SALES TYPE

STB210NF02

STB210NF02T4

STP210NF02

MARKING

B210NF02

P210NF02

B210NF02

PACKAGE

PACKAGING

D PAK

TUBE

TAPE & REEL

TUBE

D PAK

TO-220

STB210NF02-1

I PAK

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

I (**)

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

± 20

120

480

300

2.0

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

2.3

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limitedby safe operating area.

(**) Current Limited by Package

(1) I ≤120A, di/dt ≤250A/µs, V ≤ V

, T ≤ T

JMAX

(BR)DSS

(2) Starting T = 25 C, I = 60 A, V = 14 V

October 2002

1/14

12 3 4 5 6 7...14

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