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STB20NM60 PDF预览

STB20NM60

更新时间: 2024-11-23 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 359K
描述
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET

STB20NM60 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.65
雪崩能效等级(Eas):650 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.29 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):192 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB20NM60 数据手册

 浏览型号STB20NM60的Datasheet PDF文件第2页浏览型号STB20NM60的Datasheet PDF文件第3页浏览型号STB20NM60的Datasheet PDF文件第4页浏览型号STB20NM60的Datasheet PDF文件第5页浏览型号STB20NM60的Datasheet PDF文件第6页浏览型号STB20NM60的Datasheet PDF文件第7页 
STP20NM60-STP20NM60FP-STW20NM60  
STB20NM60 - STB20NM60-1  
N-CHANNEL 600V - 0.25- 20A TO-220/FP/D²/I²PAK/TO-247  
MDmesh™ MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
DSS  
DS(on)  
STP20NM60  
STP20NM60FP  
STB20NM60  
STB20NM60-1  
STW20NM60  
600 V  
600 V  
600 V  
600 V  
600 V  
< 0.29 Ω  
< 0.29 Ω  
< 0.29 Ω  
< 0.29 Ω  
< 0.29 Ω  
20 A  
20 A  
20 A  
20 A  
20 A  
3
2
1
3
2
1
TO-220  
TYPICAL R (on) = 0.25 Ω  
TO-220FP  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
2
1
3
1
TO-247  
3
LOW GATE INPUT RESISTANCE  
2
1
D²PAK  
DESCRIPTION  
I²PAK  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizon-  
tal layout. The resulting product has an  
outstanding low on-resistance, impressively high  
dv/dt and excellent avalanche characteristics. The  
adoption of the Company’s proprietary strip tech-  
nique yields overall dynamic performance that is  
significantly better than that of similar competi-  
tion’s products.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
The MDmesh™ family is very suitable for increas-  
ing power density of high voltage converters allow-  
ing system miniaturization and higher efficiencies.  
Table 2: Order Codes  
SALES TYPE  
STP20NM60  
MARKING  
P20NM60  
P20NM60FP  
B20NM60  
B20NM60  
W20NM60  
PACKAGE  
TO-220  
TO-220FP  
D²PAK  
PACKAGING  
TUBE  
STP20NM60FP  
STB20NM60T4  
STB20NM60-1  
STW20NM60  
TUBE  
TAPE & REEL  
TUBE  
I²PAK  
TO-247  
TUBE  
Rev.2  
February 2005  
1/15  

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