Datasheet > STB20NE06LT4

STB20NE06LT4

更新时间： 2024-11-19 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	86K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 20A I(D) \| TO-263AB

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STB20NE06LT4 数据手册

STB20NE06L

N-CHANNEL 60V - 0.06Ω - 20A D PAK

STripFET POWER MOSFET

DS(on)

TYPE

DSS

STB20NE06L

60 V

<0.07 Ω

20 A

■

TYPICAL RDS(on) = 0.06 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 oC

LOW THRESHOLD DRIVE

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

D PAK

TO-263

(suffix“T4”)

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronis unique “Single Feature Size ”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

±20

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Derating Factor

0.47

W/°C

V/ns

°C

(1)

Peak Diode Recovery voltage slope

Storage Temperature

dv/dt

stg

–60 to 175

175

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area.

(1)I

≤20A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

December 2000

1/8

12 3 4 5 6 7 8

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