Datasheet > STB18N60DM2

STB18N60DM2

更新时间： 2024-11-29 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	632K
描述
N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET，D2PAK封装

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STB18N60DM2 数据手册

STB18N60DM2

Datasheet

N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D²PAK

package

Features

TAB

DS(on)

max.

Order code

STB18N60DM2

600 V

0.295 Ω

12 A

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

D²

PAK

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01475V1

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status links

STB18N60DM2

Product summary

Order code

Marking

STB18N60DM2

18N60DM2

D²PAK

Package

Packing

Tape and reel

DS10962 - Rev 4 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...16

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