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STB18NF30 PDF预览

STB18NF30

更新时间: 2024-11-27 14:57:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 997K
描述
汽车级N沟道330 V、160 mOhm典型值、18 A STripFET(TM) II功率MOSFET,D2PAK封装

STB18NF30 数据手册

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STB18NF30  
Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET™ II  
Power MOSFET in a D²PAK package  
Datasheet  
-
production data  
Features  
Order code  
VDSS  
RDS(on) max.  
ID  
TAB  
STB18NF30  
330 V  
180 mΩ  
18 A  
Designed for automotive applications and  
AEC-Q101 qualified  
3
100% avalanche tested  
1
175 °C junction temperature  
D²PAK  
Applications  
Switching applications  
Figure 1. Internal schematic diagram  
Description  
This Power MOSFET has been developed using  
STMicroelectronics’ unique STripFET process,  
which is specifically designed to minimize input  
capacitance and gate charge. This renders the  
device suitable for use as primary switch in  
advanced high-efficiency isolated DC-DC  
converters for telecom and computer  
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applications, and applications with low gate  
charge driving requirements.  
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Table 1. Device summary  
Order code  
Marking  
18NF30  
Package  
Packaging  
STB18NF30  
D²PAK  
Tape and reel  
August 2013  
DocID018590 Rev 3  
1/15  
This is information on a product in full production.  
www.st.com  

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