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STB19NM65NT4 PDF预览

STB19NM65NT4

更新时间: 2024-11-20 06:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 533K
描述
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STB19NM65NT4 数据手册

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STF19NM65N-STI19NM65N-STW19NM65N  
STB19NM65N - STP19NM65N  
N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247  
second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax  
Type  
RDS(on) max  
ID  
)
3
2
3
1
2
1
STB19NM65N  
STF19NM65N  
STI19NM65N  
STP19NM65N  
STW19NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.27  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
15.5 A  
15.5 A(1)  
15.5 A  
PAK  
TO-220  
3
2
1
15.5 A  
TO-220FP  
15.5 A  
3
1. Limited only by maximum temperature allowed  
1
3
2
1
100% avalanche tested  
PAK  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STI19NM65N  
STF19NM65N  
STP19NM65N  
19NM65N  
19NM65N  
19NM65N  
19NM65N  
19NM65N  
Tube  
Tube  
TO-220FP  
TO-220  
PAK  
Tube  
STB19NM65NT4  
STW19NM65N  
Tape and reel  
Tube  
TO-247  
February 2008  
Rev 1  
1/19  
www.st.com  
19  

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