Datasheet > STB190NF04/-1

STB190NF04/-1

更新时间： 2024-11-25 22:06:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	177K
描述
N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

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数据手册

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STB190NF04/-1 数据手册

STP190NF04

STB190NF04 STB190NF04-1

N-CHANNEL 40V - 3.9 mΩ - 120A D PAK/I PAK/TO-220

STripFET™ II POWER MOSFET

PRELIMINARY DATA

DSS

TYPE

DS(on)

STB190NF04/-1

STP190NF04

40 V

<0.0043 Ω

120 A

■

TYPICAL R (on) =3.9 mΩ

STANDARD THRESHOLD DRIVE

100% AVALANCHE TESTED

I PAK

D PAK

TO-263

TO-262

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

TO-220

less critical alignment steps therefore

remarkable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURENT, HIGH SWITCHING SPEED

■

AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 20

120

480

310

2.07

I (•)

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(••)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

(1)

860

stg

-55 to 175

°C

Max. Operating Junction Temperature

(••) Pulse width limited by safe operating area.

(•) Current limited by package

1) I ≤190A, di/dt ≤600A/µs, V ≤ V

, T ≤ T

j JMAX

(BR)DSS

February 2004

1/9

12 3 4 5 6 7...9

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