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STB190NF04 PDF预览

STB190NF04

更新时间: 2024-11-25 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 177K
描述
N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STB190NF04 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:ROHS COMPLIANT, D2PAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N雪崩能效等级(Eas):860 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):120 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W最大脉冲漏极电流 (IDM):480 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB190NF04 数据手册

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STP190NF04  
STB190NF04 STB190NF04-1  
2
2
N-CHANNEL 40V - 3.9 m- 120A D PAK/I PAK/TO-220  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB190NF04/-1  
STP190NF04  
40 V  
40 V  
<0.0043 Ω  
<0.0043 Ω  
120 A  
120 A  
TYPICAL R (on) =3.9 mΩ  
DS  
3
STANDARD THRESHOLD DRIVE  
100% AVALANCHE TESTED  
3
1
2
1
2
I PAK  
2
D PAK  
TO-263  
TO-262  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
3
2
1
TO-220  
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURENT, HIGH SWITCHING SPEED  
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
40  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
40  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
120  
120  
480  
310  
2.07  
7
V
GS  
I ()  
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
(•)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
(1)  
E
860  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
() Current limited by package  
1) I 190A, di/dt 600A/µs, V V  
, T T  
j JMAX  
SD  
DD  
(BR)DSS  
February 2004  
1/9  

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