是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 110 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 15 A |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.16 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB19NB20 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET | |
STB19NB20-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-22 | |
STB19NF20 | STMICROELECTRONICS |
获取价格 |
N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK | |
STB19NM65NT4 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP | |
STB200N04 | STMICROELECTRONICS |
获取价格 |
120A, 40V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN | |
STB200N4F3 | STMICROELECTRONICS |
获取价格 |
N-channel 40V - 0.0035ヘ - 120A - D2PAK - TO-2 | |
STB200N6F3 | STMICROELECTRONICS |
获取价格 |
120A, 60V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PA | |
STB200NF03 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK | |
STB200NF03_07 | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET | |
STB200NF03-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK |