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SST39SF040-70-4C-PHE PDF预览

SST39SF040-70-4C-PHE

更新时间： 2024-09-19 20:21:47
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
22页 706K
描述
Flash, 512KX8, 70ns, PDIP32, ROHS COMPLIANT, PLASTIC, MO-015AP, DIP-32

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SST39SF040-70-4C-PHE 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：DIP包装说明：ROHS COMPLIANT, PLASTIC, MO-015AP, DIP-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.43最长访问时间：70 ns
命令用户界面：YES数据轮询：YES
JESD-30 代码：R-PDIP-T32JESD-609代码：e3
长度：41.91 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：128
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP32,.6
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：5.08 mm
部门规模：4K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.035 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：15.24 mm
Base Number Matches：1

SST39SF040-70-4C-PHE 数据手册

 浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第2页浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第3页浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第4页浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第5页浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第6页浏览型号SST39SF040-70-4C-PHE的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories  
Preliminary Specification  
FEATURES:  
•
•
•
Organized as 128K x8 / 256K x8 / 512K x8  
Single 4.5-5.5V Read and Write Operations  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39SF010A  
4 seconds (typical) for SST39SF020A  
8 seconds (typical) for SST39SF040  
•
Low Power Consumption:  
– Active Current: 10 mA (typical)  
– Standby Current: 30 µA (typical)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
– Toggle Bit  
– Data# Polling  
– 45 ns  
70 ns  
•
•
TTL I/O Compatibility  
JEDEC Standard  
•
Latched Address and Data  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 32-pin PDIP  
PRODUCT DESCRIPTION  
The SST39SF010A/020A/040 are CMOS Multi-Purpose  
Flash (MPF) manufactured with SST’s proprietary, high  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST39SF010A/020A/040 devices write  
(Program or Erase) with a 4.5-5.5V power supply. The  
SST39SF010A/020A/040 devices conform to JEDEC stan-  
dard pinouts for x8 memories.  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
Featuring high performance Byte-Program, the  
SST39SF010A/020A/040 devices provide a maximum  
Byte-Program time of 20 µsec. These devices use Toggle  
Bit or Data# Polling to indicate the completion of Program  
operation. To protect against inadvertent write, they have  
on-chip hardware and Software Data Protection schemes.  
Designed, manufactured, and tested for a wide spectrum of  
applications, these devices are offered with a guaranteed  
endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39SF010A/020A/040 are offered in 32-lead PLCC and  
32-lead TSOP packages. A 600 mil, 32-pin PDIP is also  
available. See Figures 1, 2, and 3 for pinouts.  
The SST39SF010A/020A/040 devices are suited for appli-  
cations that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during erase and program than alter-  
native flash technologies. The total energy consumed is a  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71147-02-000 2/02  
1
398  
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SST39SF040-70-4C-WHE SST

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SST39SF040-70-4I-NHE SST

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SST39SF040-70-4I-NHE MICROCHIP

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 		1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4I-WH SST

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