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SST39SF512-70-4I-WHE PDF预览

SST39SF512-70-4I-WHE

更新时间： 2024-11-02 20:28:27
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
22页 703K
描述
Flash, 64KX8, 70ns, PDSO32, 8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32

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SST39SF512-70-4I-WHE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 14 MM, LEAD FREE, MO-142BA, TSOP1-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.84Is Samacsys：N
最长访问时间：70 ns命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDSO-G32
JESD-609代码：e3长度：12.4 mm
内存密度：524288 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：16端子数量：32
字数：65536 words字数代码：64000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：64KX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP32,.56,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：5 V
编程电压：5 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：4K
最大待机电流：0.00005 A子类别：Flash Memories
最大压摆率：0.05 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：10
切换位：YES类型：NOR TYPE
宽度：8 mmBase Number Matches：1

SST39SF512-70-4I-WHE 数据手册

 浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第2页浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第3页浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第4页浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第5页浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第6页浏览型号SST39SF512-70-4I-WHE的Datasheet PDF文件第7页 
512 Kbit / 1 Mbit (x8) Multi-Purpose Flash  
SST39SF512 / SST39SF010  
SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories  
Data Sheet  
FEATURES:  
•
•
•
Organized as 64K x8 / 128K x8  
Single 4.5-5.5V Read and Write Operations  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 7 ms (typical)  
– Chip-Erase Time: 15 ms (typical)  
– Byte-Program Time: 20 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39SF512  
3 seconds (typical) for SST39SF010  
•
Low Power Consumption:  
– Active Current: 20 mA (typical)  
– Standby Current: 10 µA (typical)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
– 70 ns  
– 90 ns  
•
•
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
•
Latched Address and Data  
•
Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 32-pin PDIP  
PRODUCT DESCRIPTION  
The SST39SF512/010 are CMOS Multi-Purpose Flash  
(MPF) manufactured with SST’s proprietary, high perfor-  
mance CMOS SuperFlash technology. The split-gate cell  
design and thick oxide tunneling injector attain better reli-  
ability and manufacturability compared with alternate  
approaches. The SST39SF512/010 devices write (Pro-  
gram or Erase) with a 4.5-5.5V power supply. The  
SST39SF512/010 device conforms to JEDEC standard  
pinouts for x8 memories.  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
Featuring high performance Byte-Program, the  
SST39SF512/010 devices provide a maximum Byte-Pro-  
gram time of 30 µsec. These devices use Toggle Bit or  
Data# Polling to indicate the completion of Program opera-  
tion. To protect against inadvertent write, they have on-chip  
hardware and Software Data Protection schemes.  
Designed, manufactured, and tested for a wide spectrum of  
applications, these devices are offered with a guaranteed  
endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet high density, surface mount requirements, the  
SST39SF512/010 are offered in 32-lead PLCC packages,  
32-lead TSOP, and a 600 mil, 32-pin PDIP is also available.  
See Figures 1, 2, and 3 for pinouts.  
The SST39SF512/010 devices are suited for applications  
that require convenient and economical updating of pro-  
gram, configuration, or data memory. For all system appli-  
cations, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during erase and program than alter-  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71149-03-000 2/02  
1
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