Datasheet > SST39SF512-90-4C-U3

SST39SF512-90-4C-U3

更新时间： 2024-11-05 22:28:51

品牌	Logo	应用领域
SST		闪存内存集成电路
页数	文件大小	规格书
22页	268K
描述
512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

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SST39SF512-90-4C-U3 数据手册

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512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

SST39SF512 / SST39SF010

SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8

Single 5.0V Read and Write Operations

Superior Reliability

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 7 ms (typical)

– Chip-Erase Time: 15 ms (typical)

– Byte-Program Time: 20 µs (typical)

– Chip Rewrite Time:

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

2 seconds (typical) for SST39SF512

3 seconds (typical) for SST39SF010

•

Low Power Consumption:

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

•

Automatic Write Timing

– Internal V_PPGeneration

End-of-Write Detection

•

Sector-Erase Capability

– Uniform 4 KByte sectors

Fast Read Access Time:

– Toggle Bit

– Data# Polling

– 70 ns

– 90 ns

•

TTL I/O Compatibility

JEDEC Standard

•

Latched Address and Data

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF512/010 are CMOS Multi-Purpose Flash

(MPF) manufactured with SST’s proprietary, high perfor-

mance CMOS SuperFlash technology. The split-gate cell

design and thick oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The SST39SF512/010 devices write (Pro-

gram or Erase) with a 5.0V-only power supply. The

SST39SF512/010 device conforms to JEDEC standard

pinouts for x8 memories.

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

Featuring high performance Byte-Program, the

SST39SF512/010 devices provide a maximum Byte-Pro-

gram time of 30 µsec. These devices use Toggle Bit or

Data# Polling to indicate the completion of Program opera-

tion. To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

To meet high density, surface mount requirements, the

SST39SF512/010 are offered in 32-pin PLCC packages,

32-pin TSOP, and a 600 mil, 32-pin PDIP is also available.

See Figures 1, 2, and 3 for pinouts.

The SST39SF512/010 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

S71149-03-000 4/01

394

These specifications are subject to change without notice.

12 3 4 5 6 7...22

中文翻译

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SST39SF512-90-4C-U3 替代型号

型号	品牌	替代类型	描述	数据表
AT24C512C-WWU11D	ATMEL	功能相似	EEPROM, 64KX8, Serial, CMOS,
AT24C512-W1.8-11	ATMEL	功能相似	Two-wire Serial EEPROM
AT24C512B-W1.8-11	ATMEL	功能相似	Two-wire Serial EEPROM 512K (65,536 x 8) with Three Device Address Inputs

与SST39SF512-90-4C-U3相关器件

型号	品牌	获取价格	描述	数据表
SST39SF512-90-4C-WH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-NH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-PH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-WH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512A-45-4C-NH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-45-4C-WH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-45-4I-NH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-45-4I-WH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-70-4C-NH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-70-4C-PH	ETC	获取价格	x8 Flash EEPROM

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