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SST39SF512A-45-4C-WH PDF预览

SST39SF512A-45-4C-WH

更新时间: 2024-11-25 23:34:31
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其他 - ETC 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 228K
描述
x8 Flash EEPROM

SST39SF512A-45-4C-WH 数据手册

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512 Kbit / 1 Mbit / 2 Mbit (x8) Multi-Purpose Flash  
SST39SF512A / SST39SF010A / SST39SF020A  
DataSheet  
FEATURES:  
FastEraseandByte-Program:  
1
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– ChipRewriteTime:  
Organized as 64K x8 / 128K x8 / 256K x8  
Single 5.0V Read and Write Operations  
SuperiorReliability  
2
1 seconds (typical) for SST39SF512A  
2 seconds (typical) for SST39SF010A  
4 seconds (typical) for SST39SF020A  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
3
Low Power Consumption:  
Automatic Write Timing  
- InternalVPPGeneration  
End-of-WriteDetection  
– Active Current: 10 mA (typical)  
– Standby Current: 30 µA (typical)  
4
Sector-EraseCapability  
– Uniform 4 KByte sectors  
FastReadAccessTime:  
– 45 and 70 ns  
– Toggle Bit  
– Data# Polling  
TTL I/O Compatibility  
5
JEDEC Standard  
LatchedAddressandData  
– Flash EEPROM Pinouts and command sets  
Packages Available  
6
– 32-Pin PDIP  
– 32-Pin PLCC  
– 32-Pin TSOP (8mm x 14mm)  
7
PRODUCTDESCRIPTION  
8
of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
hasashortererasetime,thetotalenergyconsumedduring  
any Erase or Program operation is less than alternative  
flash technologies. These devices also improve flexibility  
whileloweringthecostforprogram,data,andconfiguration  
storageapplications.  
The SST39SF512A/010A/020A are CMOS Multi-Pur-  
poseFlash(MPF)manufacturedwithSST’sproprietary,  
high performance CMOS SuperFlash technology. The  
split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared  
with alternate approaches. The SST39SF512A/010A/  
020Adeviceswrite(ProgramorErase)witha5.0Vpower  
supply.TheSST39SF512A/010A/020Adeviceconforms  
to JEDEC standard pinouts for x8 memories.  
9
10  
11  
12  
13  
14  
15  
16  
The SuperFlash technology provides fixed Erase and  
Program times, independent of the number of Erase/  
Program cycles that have occurred. Therefore the sys-  
tem software or hardware does not have to be modified  
or de-rated as is necessary with alternative flash tech-  
nologies,whoseEraseandProgramtimesincreasewith  
accumulated Erase/Program cycles.  
Featuring high performance Byte-Program, the  
SST39SF512A/010A/020Adevicesprovideamaximum  
Byte-Programtimeof20µsec.ThesedevicesuseToggle  
BitorData#PollingtoindicatethecompletionofProgram  
operation.Toprotectagainstinadvertentwrite,theyhave  
on-chip hardware and Software Data Protection  
schemes.Designed,manufactured,andtestedforawide  
spectrum of applications, these devices are offered with  
aguaranteedenduranceof10,000cycles.Dataretention  
is rated at greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39SF512A/010A/020A are offered in 32-pin TSOP  
and 32-pin PLCC packages. A 600 mil, 32-pin PDIP is  
also available. See Figures 1, 2 and 3 for pinouts.  
DeviceOperation  
The SST39SF512A/010A/020A devices are suited for  
applicationsthatrequireconvenientandeconomicalupdat-  
ing of program, configuration, or data memory. For all  
system applications, they significantly improve perfor-  
mance and reliability, while lowering power consumption.  
Theyinherentlyuselessenergyduringeraseandprogram  
than alternative flash technologies. The total energy con-  
sumedisafunctionoftheappliedvoltage,current,andtime  
Commands are used to initiate the memory operation  
functionsofthedevice.Commandsarewrittentothedevice  
using standard microprocessor write sequences. A com-  
mand is written by asserting WE# low while keeping CE#  
low. TheaddressbusislatchedonthefallingedgeofWE#  
or CE#, whichever occurs last. The data bus is latched on  
the rising edge of WE# or CE#, whichever occurs first.  
©2000SiliconStorageTechnology,Inc.  
509-3 10/00 S71164  
TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.MPFisatrademarkofSiliconstorageTechnology,Inc.  
Thesespecificationsaresubjecttochangewithoutnotice.  

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