Datasheet > SST39SF512-70-4I-WHE

SST39SF512-70-4I-WHE

更新时间： 2024-11-23 04:50:35

品牌	Logo	应用领域
SST		闪存内存集成电路光电二极管
页数	文件大小	规格书
22页	341K
描述
512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

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512 Kbit (x8) Multi-Purpose Flash

SST39SF512

SST39SF5125.0V 512Kb (x8) MPF memory

Data Sheet

FEATURES:

•

Organized as 64K x8

•

Fast Erase and Byte-Program

Single 4.5-5.5V Read and Write Operations

Superior Reliability

– Sector-Erase Time: 7 ms (typical)

– Chip-Erase Time: 15 ms (typical)

– Byte-Program Time: 20 µs (typical)

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Chip Rewrite Time: 2 seconds (typical)

•

Automatic Write Timing

•

Low Power Consumption

(typical values at 14 MHz)

– Internal V_PPGeneration

End-of-Write Detection

– Active Current: 10 mA (typical)

– Standby Current: 10 µA (typical)

– Toggle Bit

– Data# Polling

•

Sector-Erase Capability

– Uniform 4 KByte sectors

Fast Read Access Time:

– 70 ns

•

TTL I/O Compatibility

JEDEC Standard

– Flash EEPROM Pinouts and command sets

Packages Available

•

Latched Address and Data

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF512 are CMOS Multi-Purpose Flash (MPF)

manufactured with SST’s proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST39SF512 devices write (Program or Erase) with a

4.5-5.5V power supply. The SST39SF512 device conforms

to JEDEC standard pinouts for x8 memories.

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

Featuring high performance Byte-Program, the

SST39SF512 devices provide a maximum Byte-Program

time of 30 µsec. These devices use Toggle Bit or Data#

Polling to indicate the completion of Program operation. To

protect against inadvertent write, they have on-chip hard-

ware and Software Data Protection schemes. Designed,

manufactured, and tested for a wide spectrum of applica-

tions, these devices are offered with a guaranteed typical

endurance of 100,000 cycles. Data retention is rated at

greater than 100 years.

To meet high density, surface mount requirements, the

SST39SF512 are offered in 32-lead PLCC, 32-lead TSOP,

and a 600 mil, 32-pin PDIP packages. See Figures 1, 2,

and 3 for pin assignments.

The SST39SF512 devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during erase and program than alternative flash

technologies. The total energy consumed is a function of

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

S71149-05-000

11/03

These specifications are subject to change without notice.

12 3 4 5 6 7...22

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与SST39SF512-70-4I-WHE相关器件

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SST39SF512-90-4C-NH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4C-PH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4C-U3	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4C-WH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-NH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-PH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512-90-4I-WH	SST	获取价格	512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
SST39SF512A-45-4C-NH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-45-4C-WH	ETC	获取价格	x8 Flash EEPROM
SST39SF512A-45-4I-NH	ETC	获取价格	x8 Flash EEPROM

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