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SST39SF040-70-4I-NHE-T PDF预览

SST39SF040-70-4I-NHE-T

更新时间: 2024-11-23 13:14:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
28页 273K
描述
IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC

SST39SF040-70-4I-NHE-T 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:12 weeks
风险等级:5.44Is Samacsys:N
最长访问时间:70 ns命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PQCC-J32
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8部门数/规模:128
端子数量:32字数:524288 words
字数代码:512000最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
部门规模:4K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.035 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
类型:NOR TYPEBase Number Matches:1

SST39SF040-70-4I-NHE-T 数据手册

 浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第2页浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第3页浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第4页浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第5页浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第6页浏览型号SST39SF040-70-4I-NHE-T的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
Data Sheet  
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose  
Flash (MPF) devices manufactured with SST proprietary, high performance  
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-  
ing injector attain better reliability and manufacturability compared with alternate  
approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program  
or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts  
for x8 memories  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Single 4.5-5.5V Read and Write Operations  
• Superior Reliability  
• Fast Erase and Byte-Program  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39SF010A  
4 seconds (typical) for SST39SF020A  
8 seconds (typical) for SST39SF040  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Low Power Consumption  
(typical values at 14 MHz)  
• End-of-Write Detection  
– Active Current: 10 mA (typical)  
– Standby Current: 30 µA (typical)  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
• TTL I/O Compatibility  
– Uniform 4 KByte sectors  
• JEDEC Standard  
• Fast Read Access Time:  
– Flash EEPROM Pinouts and command sets  
– 55 ns  
– 70 ns  
• Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 32-pin PDIP  
• Latched Address and Data  
• Automatic Write Timing  
• All devices are RoHS compliant  
– Internal VPP Generation  
www.microchip.com  
©2013 Silicon Storage Technology, Inc.  
DS25022B  
04/13  

SST39SF040-70-4I-NHE-T 替代型号

型号 品牌 替代类型 描述 数据表
SST39SF040-70-4I-NHE MICROCHIP

完全替代

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

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