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SST25VF016B-75-4I-S2AF-T PDF预览

SST25VF016B-75-4I-S2AF-T

更新时间: 2024-11-23 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
32页 332K
描述
16M X 1 4-WIRE SERIAL EEPROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, SOIC-8

SST25VF016B-75-4I-S2AF-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.64
最大时钟频率 (fCLK):80 MHz数据保留时间-最小值:100
耐久性:100000 Write/Erase CyclesJESD-30 代码:S-PDSO-G8
JESD-609代码:e4长度:5.275 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:1功能数量:1
端子数量:8字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:SQUARE封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.16 mm
串行总线类型:SPI最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5.275 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

SST25VF016B-75-4I-S2AF-T 数据手册

 浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第2页浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第3页浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第4页浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第5页浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第6页浏览型号SST25VF016B-75-4I-S2AF-T的Datasheet PDF文件第7页 
16 Mbit SPI Serial Flash  
SST25VF016B  
A Microchip Technology Company  
Data Sheet  
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface  
that allows for a low pin-count package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF016B devices are enhanced with  
improved operating frequency and lower power consumption. SST25VF016B SPI  
serial flash memories are manufactured with SST's proprietary, high-performance  
CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnel-  
ing injector attain better reliability and manufacturability compared with alternate  
approaches.  
Features  
• Single Voltage Read and Write Operations  
• Auto Address Increment (AAI) Programming  
– 2.7-3.6V  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
• Serial Interface Architecture  
• End-of-Write Detection  
– SPI Compatible: Mode 0 and Mode 3  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• High Speed Clock Frequency  
– Up to 80 MHz  
• Hold Pin (HOLD#)  
• Superior Reliability  
– Suspends a serial sequence to the memory  
without deselecting the device  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Write Protection (WP#)  
• Low Power Consumption:  
– Enables/Disables the Lock-Down function of the status  
register  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
• Software Write Protection  
• Flexible Erase Capability  
– Write protection through Block-Protection bits in status  
register  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
• Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
• Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• Packages Available  
– 8-lead SOIC (200 mils)  
– 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25044A  
08/11  

SST25VF016B-75-4I-S2AF-T 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF016B-75-4I-QAF MICROCHIP

完全替代

16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST26VF016-80-5I-S2AE MICROCHIP

完全替代

16M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8

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