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SST25VF020-20-4I-QAE PDF预览

SST25VF020-20-4I-QAE

更新时间: 2024-11-07 20:32:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
27页 283K
描述
2M X 1 FLASH 2.7V PROM, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

SST25VF020-20-4I-QAE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SON
包装说明:VSOP, SOLCC8,.25针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:7 weeks
风险等级:5.53Is Samacsys:N
其他特性:SYNCHRONOUS MODE ALSO POSSIBLE最大时钟频率 (fCLK):20 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:6 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX1
封装主体材料:PLASTIC/EPOXY封装代码:VSOP
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:0.8 mm串行总线类型:SPI
最大待机电流:0.000015 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

SST25VF020-20-4I-QAE 数据手册

 浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第2页浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第3页浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第4页浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第5页浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第6页浏览型号SST25VF020-20-4I-QAE的Datasheet PDF文件第7页 
Not recommended for new designs.  
Please use SST25VF020B  
2 Mbit SPI Serial Flash  
SST25VF020  
A Microchip Technology Company  
Not Recommended for New Designs  
SST's serial flash family features a four-wire, SPI-compatible interface that allows  
for a low pin-count package occupying less board space and ultimately lowering  
total system costs. SST25VF020 SPI serial flash memory is manufactured with  
SST proprietary, high performance CMOS SuperFlash Technology. The split-gate  
cell design and thick-oxide tunneling injector attain better reliability and manufac-  
turability compared with alternate approaches.  
Features  
• Single 2.7-3.6V Read and Write Operations  
• End-of-Write Detection  
– Software Status  
• Serial Interface Architecture  
• Hold Pin (HOLD#)  
– SPI Compatible: Mode 0 and Mode 3  
– Suspends a serial sequence to the memory  
• 20 MHz Max Clock Frequency  
• Superior Reliability  
without deselecting the device  
• Write Protection (WP#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Enables/Disables the Lock-Down function of the status  
register  
• Low Power Consumption:  
• Software Write Protection  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
– Write protection through Block-Protection bits in status  
register  
• Flexible Erase Capability  
• Temperature Range  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
• Fast Erase and Byte-Program:  
• Packages Available  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
• Auto Address Increment (AAI) Programming  
• All non-Pb (lead-free) devices are RoHS compliant  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25078A  
11/11  

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