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SST25VF020B-80-4C-SAE

更新时间： 2024-11-19 20:19:55
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
33页 882K
描述
EEPROM, 2MX1, Serial, CMOS, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8

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SST25VF020B-80-4C-SAE 技术参数

生命周期：Transferred零件包装代码：SOIC
包装说明：5 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8针数：8
Reach Compliance Code：unknownECCN代码：3A991.B.1.B.1
HTS代码：8542.32.00.51风险等级：5.66
最大时钟频率 (fCLK)：80 MHzJESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：2097152 words字数代码：2000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：2MX1
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.75 mm
串行总线类型：SPI最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

SST25VF020B-80-4C-SAE 数据手册

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2 Mbit SPI Serial Flash  
SST25VF020B  
SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
•
•
•
•
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
High Speed Clock Frequency  
– Up to 80 MHz  
•
•
•
•
•
•
•
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
•
•
Low Power Consumption:  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
•
Packages Available  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The 25 series Serial Flash family features a four-wire, SPI-  
compatible interface that allows for a low pin-count pack-  
age which occupies less board space and ultimately lowers  
total system costs. The SST25VF020B devices are  
enhanced with improved operating frequency and even  
lower power consumption. SST25VF020B SPI serial flash  
memories are manufactured with SST proprietary, high-  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches.  
The SST25VF020B devices significantly improve perfor-  
mance and reliability, while lowering power consumption.  
The devices write (Program or Erase) with a single power  
supply of 2.7-3.6V for SST25VF020B. The total energy  
consumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed during  
any Erase or Program operation is less than alternative  
flash memory technologies.  
The SST25VF020B device is offered in 8-lead SOIC (150  
mils) and 8-contact WSON (6mm x 5mm) packages. See  
Figure 2 for pin assignments.  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71417-01-000  
1
02/10  
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