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SST25VF020B-80-4C-SAE-T PDF预览

SST25VF020B-80-4C-SAE-T

更新时间: 2024-11-19 14:44:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
36页 359K
描述
IC,SERIAL EEPROM,NOR FLASH,256KX8,CMOS,SOP,8PIN,PLASTIC

SST25VF020B-80-4C-SAE-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
Factory Lead Time:11 weeks风险等级:1.46
最大时钟频率 (fCLK):80 MHz数据保留时间-最小值:100
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3端子数量:8
字数:262144 words字数代码:256000
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
串行总线类型:SPI最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.03 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE写保护:HARDWARE/SOFTWARE
Base Number Matches:1

SST25VF020B-80-4C-SAE-T 数据手册

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2 Mbit SPI Serial Flash  
SST25VF020B  
Data Sheet  
The 25 series Serial Flash family features a four-wire, SPI compatible interface  
that allows for a low pin-count package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF020B devices are enhanced with  
improved operating frequency and even lower power consumption.  
SST25VF020B SPI serial flash memories are manufactured with SST proprietary,  
high performance CMOS SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and manufacturability com-  
pared with alternate approaches.  
Features  
• Single Voltage Read and Write Operations  
• End-of-Write Detection  
– 2.7-3.6V  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• Serial Interface Architecture  
• Hold Pin (HOLD#)  
– SPI Compatible: Mode 0 and Mode 3  
– Suspends a serial sequence to the memory  
without deselecting the device  
• High Speed Clock Frequency  
– Up to 80 MHz  
• Write Protection (WP#)  
• Superior Reliability  
– Enables/Disables the Lock-Down function of the status  
register  
– Endurance: 100,000 Cycles  
– Greater than 100 years Data Retention  
• Software Write Protection  
• Low Power Consumption:  
– Write protection through Block-Protection bits in status  
register  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
• Temperature Range  
• Flexible Erase Capability  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
• Packages Available  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
– 8-contact USON (3mm x 2mm)  
• Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• All non-Pb (lead-free) devices are RoHS compliant  
• Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
www.microchip.com  
©2013 Silicon Storage Technology, Inc.  
DS20005054C  
04/13  

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