5秒后页面跳转
SST25VF020B-80-4C-QAE PDF预览

SST25VF020B-80-4C-QAE

更新时间: 2024-11-23 20:19:55
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
33页 882K
描述
EEPROM, 2MX1, Serial, CMOS, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

SST25VF020B-80-4C-QAE 技术参数

生命周期:Transferred零件包装代码:SON
包装说明:HVSON,针数:8
Reach Compliance Code:unknownECCN代码:3A991.B.1.B.1
HTS代码:8542.32.00.51风险等级:5.64
Is Samacsys:N最大时钟频率 (fCLK):80 MHz
JESD-30 代码:R-PDSO-N8长度:6 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:1功能数量:1
端子数量:8字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX1封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:0.8 mm串行总线类型:SPI
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL宽度:5 mm
Base Number Matches:1

SST25VF020B-80-4C-QAE 数据手册

 浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第2页浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第3页浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第4页浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第5页浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第6页浏览型号SST25VF020B-80-4C-QAE的Datasheet PDF文件第7页 
2 Mbit SPI Serial Flash  
SST25VF020B  
SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
High Speed Clock Frequency  
– Up to 80 MHz  
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Low Power Consumption:  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
Packages Available  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The 25 series Serial Flash family features a four-wire, SPI-  
compatible interface that allows for a low pin-count pack-  
age which occupies less board space and ultimately lowers  
total system costs. The SST25VF020B devices are  
enhanced with improved operating frequency and even  
lower power consumption. SST25VF020B SPI serial flash  
memories are manufactured with SST proprietary, high-  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches.  
The SST25VF020B devices significantly improve perfor-  
mance and reliability, while lowering power consumption.  
The devices write (Program or Erase) with a single power  
supply of 2.7-3.6V for SST25VF020B. The total energy  
consumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed during  
any Erase or Program operation is less than alternative  
flash memory technologies.  
The SST25VF020B device is offered in 8-lead SOIC (150  
mils) and 8-contact WSON (6mm x 5mm) packages. See  
Figure 2 for pin assignments.  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71417-01-000  
1
02/10  

与SST25VF020B-80-4C-QAE相关器件

型号 品牌 获取价格 描述 数据表
SST25VF020B-80-4C-SAE SST

获取价格

2 Mbit SPI Serial Flash
SST25VF020B-80-4C-SAE SILICON

获取价格

EEPROM, 2MX1, Serial, CMOS, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8
SST25VF020B-80-4C-SAE-T MICROCHIP

获取价格

IC,SERIAL EEPROM,NOR FLASH,256KX8,CMOS,SOP,8PIN,PLASTIC
SST25VF020B-80-4I-QAE SST

获取价格

2 Mbit SPI Serial Flash
SST25VF020B-80-4I-QAE SILICON

获取价格

EEPROM, 2MX1, Serial, CMOS, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST25VF020B-80-4I-QAE-T MICROCHIP

获取价格

IC,SERIAL EEPROM,NOR FLASH,256KX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF020B-80-4I-SAE SST

获取价格

2 Mbit SPI Serial Flash
SST25VF020B-80-4I-SAE SILICON

获取价格

EEPROM, 2MX1, Serial, CMOS, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8
SST25VF020B-80-4I-SAE-T MICROCHIP

获取价格

IC,SERIAL EEPROM,NOR FLASH,256KX8,CMOS,SOP,8PIN,PLASTIC
SST25VF032B MICROCHIP

获取价格

32 Mbit SPI Serial Flash