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SST25VF020B_13 PDF预览

SST25VF020B_13

更新时间: 2024-11-07 12:27:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
36页 346K
描述
2 Mbit SPI Serial Flash

SST25VF020B_13 数据手册

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2 Mbit SPI Serial Flash  
SST25VF020B  
Data Sheet  
The 25 series Serial Flash family features a four-wire, SPI compatible interface  
that allows for a low pin-count package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF020B devices are enhanced with  
improved operating frequency and even lower power consumption.  
SST25VF020B SPI serial flash memories are manufactured with SST proprietary,  
high performance CMOS SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and manufacturability com-  
pared with alternate approaches.  
Features  
• Single Voltage Read and Write Operations  
• End-of-Write Detection  
– 2.7-3.6V  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• Serial Interface Architecture  
• Hold Pin (HOLD#)  
– SPI Compatible: Mode 0 and Mode 3  
– Suspends a serial sequence to the memory  
without deselecting the device  
• High Speed Clock Frequency  
– Up to 80 MHz  
• Write Protection (WP#)  
• Superior Reliability  
– Enables/Disables the Lock-Down function of the status  
register  
– Endurance: 100,000 Cycles  
– Greater than 100 years Data Retention  
• Software Write Protection  
• Low Power Consumption:  
– Write protection through Block-Protection bits in status  
register  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
• Temperature Range  
• Flexible Erase Capability  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
• Packages Available  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
– 8-contact USON (3mm x 2mm)  
• Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• All non-Pb (lead-free) devices are RoHS compliant  
• Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
www.microchip.com  
©2013 Silicon Storage Technology, Inc.  
DS20005054C  
04/13  

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