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SST25VF020-20-4I-SAE PDF预览

SST25VF020-20-4I-SAE

更新时间： 2024-11-19 03:44:35
品牌 Logo 应用领域
SST 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
23页 398K
描述
2 Mbit / 4 Mbit SPI Serial Flash

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SST25VF020-20-4I-SAE 数据手册

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2 Mbit SPI Serial Flash  
SST25VF020  
SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
•
•
End-of-Write Detection  
– Software Status  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
•
•
•
•
•
•
•
•
Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
•
•
Packages Available  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
•
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST serial flash family features a four-wire, SPI-  
compatible interface that allows for a low pin-count pack-  
age occupying less board space and ultimately lowering  
total system costs. SST25VF020 SPI serial flash memo-  
ries are manufactured with SST’s proprietary, high perfor-  
mance CMOS SuperFlash Technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches.  
rent, and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to  
program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies. The  
SST25VF020 device operates with a single 2.7-3.6V  
power supply.  
The SST25VF020 device is offered in an 8-lead SOIC 150  
mil body width (SA) package, and in an 8-contact WSON  
package. See Figure 2 for the pin assignments.  
The SST25VF020 device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage, cur-  
©2006 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71231-07-000  
1
10/06  
1234567...23

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