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SST25VF020B_11 PDF预览

SST25VF020B_11

更新时间: 2024-11-23 09:04:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
35页 3755K
描述
2 Mbit SPI Serial Flash

SST25VF020B_11 数据手册

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2 Mbit SPI Serial Flash  
SST25VF020B  
A Microchip Technology Company  
Data Sheet  
The 25 series Serial Flash family features a four-wire, SPI compatible inter-  
face that allows for a low pin-count package which occupies less board space  
and ultimately lowers total system costs. The SST25VF020B devices are  
enhanced with improved operating frequency and even lower power con-  
sumption. SST25VF020B SPI serial flash memories are manufactured with  
SST proprietary, high performance CMOS SuperFlash technology. The split-  
gate cell design and thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
Features:  
• Single Voltage Read and Write Operations  
• Auto Address Increment (AAI) Programming  
– 2.7-3.6V  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
• Serial Interface Architecture  
• End-of-Write Detection  
– SPI Compatible: Mode 0 and Mode 3  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• High Speed Clock Frequency  
– Up to 80 MHz  
• Hold Pin (HOLD#)  
• Superior Reliability  
– Suspends a serial sequence to the memory  
without deselecting the device  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Write Protection (WP#)  
• Low Power Consumption:  
– Enables/Disables the Lock-Down function of the status  
register  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
• Software Write Protection  
• Flexible Erase Capability  
– Write protection through Block-Protection bits in status  
register  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
• Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
• Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• Packages Available  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
• All non-Pb (lead-free) devices are RoHS compliant  
www.microchip.com  
www.sst.com  
©2011 Silicon Storage Technology, Inc.  
S71417-03-000  
02/11  

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