Datasheet > SST113

SST113

更新时间： 2024-11-16 12:56:39

品牌	Logo	应用领域
MICROSS		晶体晶体管开关光电二极管瞄准线
页数	文件大小	规格书
1页	283K
描述
Linear Systems replaces discontinued Siliconix SST113

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SST113 数据手册

SST113

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST113

FEATURES

This n-channel JFET is optimised for low noise high

DIRECT REPLACEMENT FOR SILICONIX SST113

LOW GATE LEAKAGE CURRENT

FAST SWITCHING

performance switching. The part is particularly suitable

for use in low noise audio amplifiers. The SOT-23

package is well suited for cost sensitive applications

and mass production.

5pA

t_(on)≤ 4ns

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

(See Packaging Information).

Storage Temperature

‐55°C to +150°C

‐55°C to +135°C

SST113 Benefits:

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Short Sample & Hold Aperture Time

Low insertion loss

Low Noise

350mW

SST113 Applications:

Gate Current (Note 1)

50mA

Analog Switches

Commutators

Choppers

MAXIMUM VOLTAGES

Gate to Drain Voltage

Gate to Source Voltage

V_GDS= ‐35V

V_GSS= ‐35V

SST113 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

I_DSS

I_GSS

I_G

I_D(off)

r_DS(on)

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

Drain to Source Saturation Current (Note 2)

Gate Reverse Current

MIN

‐35

‐‐

TYP.

‐‐

0.7

‐‐

‐0.005

‐0.5

0.005

‐‐

MAX

‐‐

‐3

‐‐

‐1

‐‐

100

UNITS

CONDITIONS

I_G= 1µA, V_DS= 0V

V_DS= 5V, I_D= 1µA

I_G= 1mA, V_DS= 0V

V_DS= 15V, V_GS= 0V

V_GS= ‐15V, V_DS= 0V

V_DG= 15V, I_D= 10mA

V_DS= 5V, V_GS= ‐10V

I_G= 1mA, V_DS= 0V

Gate Operating Current

Drain Cutoff Current

Drain to Source On Resistance

SST113 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

g_os

r_DS(on)

C_iss

CHARACTERISTIC

MIN

‐‐

TYP.

‐‐

MAX

‐‐

100

UNITS

µS

CONDITIONS

V_DS= 20V, I_D= 1mA , f = 1kHz

Forward Transconductance

Click To Buy

Output Conductance

Drain to Source On Resistance

Input Capacitance

‐‐

V_GS= 0V, I_D= 0mA, f = 1kHz

V_DS= 0V, V_GS= ‐10V, f = 1MHz

C_rss

e_n

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

nV/√Hz

V_DG= 10V, I_D= 1mA , f = 1kHz

SST113 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_DD= 10V

V_GS(H) = 0V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which SST113 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

SST113 SWITCHING CIRCUIT PARAMETERS

SWITCHING TEST CIRCUIT

V_GS(L)

R_L

‐5V

3200Ω

3mA

Available Packages:

SOT-23 (Top View)

SST113 in SOT-23

SST113 in bare die.

I_D(on)

Micross Components Europe

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

中文翻译

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与SST113相关器件

型号	品牌	获取价格	描述	数据表
SST113_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
SST1130	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 200MA I(C) \| SOT-23
SST1130T216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
SST1139	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 30MA I(C) \| SOT-23
SST1139T116	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
SST1139T216	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
SST113-E3	VISHAY	获取价格	Transistor
SST113-SOT-23-3L	Linear	获取价格	Transistor,
SST113-SOT-23-3L-ROHS	Linear	获取价格	Transistor,
SST113T	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,

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