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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| SST113TT1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SST113TT2 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SST113TT2 | TEMIC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, |
|
| SST113TT2-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SST114 | CIT |
获取价格 |
CIT SWITCH |
|
| SST11CP15 | SST |
获取价格 |
4.9-5.8 GHz High-Linearity Power Amplifier |
|
| SST11CP15E | MICROCHIP |
获取价格 |
4.9-5.9 GHz High-Linearity Power Amplifier |
|
| SST11CP15-QUBE | MICROCHIP |
获取价格 |
4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.60 MM HEI |
|
| SST11CP16 | MICROCHIP |
获取价格 |
5.1-5.9 GHz High-Linearity Power Amplifier |
|
| SST11CP16-QXCE | MICROCHIP |
获取价格 |
5.1-5.9 GHz High-Linearity Power Amplifier |
|
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