Datasheet > SST11LP12

SST11LP12

更新时间： 2024-09-29 04:01:23

品牌	Logo	应用领域
SST		放大器功率放大器
页数	文件大小	规格书
17页	564K
描述
4.9-5.8 GHz High-Linearity Power Amplifier

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SST11LP12 数据手册

4.9-5.8 GHz High-Linearity Power Amplifier

SST11LP12

SST1LP124.9-5.8 GHz High-Linearity Power Amplifier

Preliminary Specifications

FEATURES:

•

High Gain:

•

High temperature stability

– Typically 35 dB gain across 4.9-5.8 GHz over

temperature 0°C to +85°C

– ~1.5/1.0 dB gain/power variation between

0°C to +85°C

– ~1 dB detector variation over 0°C to +85°C

•

High linear output power:

•

Low shut-down current (< 0.1 µA)

On-chip power detection

20 dB dynamic range on-chip power detection

Simple input/output matching

Packages available

– ~28 dBm P1dB (Pulsed single-tone signal)

– Meet 802.11a OFDM ACPR requirement up to

23+ dBm over ~ entire band

– Added EVM~4% up to 21 dBm for

54 Mbps 802.11a signal

•

High power-added efficiency/Low operating

current for 54 Mbps 802.11a applications

– ~12% @ P_OUT= 21 dBm for 54 Mbps

Built-in Ultra-low I_REFpower-up/down control

– I_REF<3 mA

Low idle current

– ~130 mA I_CQ

High speed power up/down

– 16-contact WQFN (3mm x 3mm)

– Non-Pb (lead-free) packages available

•

APPLICATIONS:

•

WLAN (IEEE 802.11a)

Japan WLAN

HyperLAN2

– Turn on/off time (10%~90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

Multimedia

PRODUCT DESCRIPTION

The SST11LP12 is a high-power, high-gain power amplifier

based on the highly-reliable InGaP/GaAs HBT technology.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/down control. Ultra-

low reference current (total I_REF<3 mA) makes the

SST11LP12 controllable by an on/off switching signal

directly from the baseband chip. These features coupled

with low operating current make the SST11LP12 ideal for

the final stage power amplification in battery-powered

802.11a WLAN transmitter and access point applications.

The SST11LP12 can be easily configured for high-power,

high-efficiency applications with superb power-added effi-

ciency while operating over the entire 802.11a frequency

band for U.S., European, and Japanese markets (4.9-5.8

GHz). It typically provides 35 dB gain with 16% power-

added efficiency @ P_OUT= 23 dBm.

The SST11LP12 is offered in 16-contact WQFN package.

See Figure 1 for pin assignments and Table 1 for pin

descriptions.

The SST11LP12 has excellent linearity, typically ~4%

added EVM at 21 dBm output power which is essential for

54 Mbps 802.11a operation while meeting 802.11a spec-

trum mask at 23+ dBm. SST11LP12 also has wide-range

(>20 dB), temperature-stable (~1 dB over 85°C), single-

ended/differential power detectors which lower users’ cost

on power control.

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71278-01-000

1/06

12 3 4 5 6 7...17

中文翻译

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与SST11LP12相关器件

型号	品牌	获取价格	描述	数据表
SST11LP12_10	SST	获取价格	4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12-QCF	SST	获取价格	4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12-QCF-K	SST	获取价格	4.9-5.8 GHz High-Linearity Power Amplifier
SST11P1	CIT	获取价格	CIT SWITCH
SST11P2	CIT	获取价格	CIT SWITCH
SST11T1	CIT	获取价格	CIT SWITCH
SST11T2	CIT	获取价格	CIT SWITCH
SST120	CRYDOM	获取价格	THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
SST-1201-G-03-L	SAMTEC	获取价格	IC Socket, SIP12, 12 Contact(s)
SST-1201-G-11-L	SAMTEC	获取价格	IC Socket, SIP12, 12 Contact(s)

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