Datasheet > SST11CP15E

SST11CP15E

更新时间： 2024-11-16 12:01:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		放大器功率放大器
页数	文件大小	规格书
17页	174K
描述
4.9-5.9 GHz High-Linearity Power Amplifier

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SST11CP15E 数据手册

4.9-5.9 GHz High-Linearity Power Amplifier

SST11CP15E

Data Sheet

The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac

embedded applications and is based on the highly-reliable InGaP/GaAs HBT

technology. It is easily configured for high-linearity, high-efficiency applications

over a wide temperature range while operating over the 4.9-5.9 GHz frequency

band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum

mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.

It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at

1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-

fier requires only a 4mA reference current for on/off control. It includes a VSWR/

temperature insensitive, linear power detector. The SST11CP15E is offered in a

12-contact UQFN package.

Features

• Small package size

• 50Ω on-chip input match and simple output match

– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-

ness)

• Packages available

– 12-pin QFN 2mm x 2mm x 0.55mm

• Wide operating voltage range

• All lead-free devices are RoHS compliant

– V_CC= 3.0–5.0V

• High linear output power, 802.11a/n/ac:

– Spectrum mask compliant using 802.11a OFDM

- Up to 24 dBm at 5.0V

Applications

- Up to 22 dBm at 3.3V

• WLAN (IEEE 802.11a/n/ac)

• Japan WLAN

• HyperLAN2

– Spectrum mask compliant using 802.11n MCS7, 40 MHz

- Up to 22 dBm at 5.0V

- Up to 19 dBm at 3.3V

– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a

- Up to 20 dBm at 5.0V V_CC

- Up to 18 dBm at 3.3V V_CC

• Multimedia

– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac

- Up to 16 dBm at 3.3V V_CC

• WiMax

• High power-added efficiency/low operating current

for 54 Mbps 802.11a applications

– ~10% @ P_OUT= 19 dBm for 54 Mbps, 3.3V V_CC

• Gain:

– Typically >26 dB gain across broadband

4.9-5.9 GHz, 3.3V V_CC

• Low idle current

– ~140 mA I_CQ, 3.3 V V_CC

• High speed power-up/-down

– Turn on/off time (10%~90%) <100 ns

• Low shut-down current (<1 µA)

• On-chip power detector with -20 dB linear dynamic

range

– Temperature Stable

– VSWR insensitive

www.microchip.com

DS70005025C

05/13

12 3 4 5 6 7...17

中文翻译

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与SST11CP15E相关器件

型号	品牌	获取价格	描述	数据表
SST11CP15-QUBE	MICROCHIP	获取价格	4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.60 MM HEI
SST11CP16	MICROCHIP	获取价格	5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16-QXCE	MICROCHIP	获取价格	5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP16-QXCE-K	MICROCHIP	获取价格	5.1-5.9 GHz High-Linearity Power Amplifier
SST11CP22	MICROCHIP	获取价格	5.1-5.9 GHz 802.11ac WLAN Power Amplifier
SST11CP22-GN	MICROCHIP	获取价格	5.1-5.9 GHz 802.11ac WLAN Power Amplifier
SST11CP22-GN-K	MICROCHIP	获取价格	5.1-5.9 GHz 802.11ac WLAN Power Amplifier
SST11LF04	MICROCHIP	获取价格	4.9-5.9 GHz High-Linearity, High-Efficiency Front-end Module
SST11LF04-Q3CE	MICROCHIP	获取价格	4.9-5.9 GHz High-Linearity, High-Efficiency Front-end Module
SST11LF04-Q3CE-K	MICROCHIP	获取价格	4.9-5.9 GHz High-Linearity, High-Efficiency Front-end Module

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