生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 其他特性: | LOW INSERTION LOSS |
配置: | SINGLE | 最大漏源导通电阻: | 100 Ω |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 5 pF |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST113TT2-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A | |
SST114 | CIT |
获取价格 |
CIT SWITCH | |
SST11CP15 | SST |
获取价格 |
4.9-5.8 GHz High-Linearity Power Amplifier | |
SST11CP15E | MICROCHIP |
获取价格 |
4.9-5.9 GHz High-Linearity Power Amplifier | |
SST11CP15-QUBE | MICROCHIP |
获取价格 |
4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.60 MM HEI | |
SST11CP16 | MICROCHIP |
获取价格 |
5.1-5.9 GHz High-Linearity Power Amplifier | |
SST11CP16-QXCE | MICROCHIP |
获取价格 |
5.1-5.9 GHz High-Linearity Power Amplifier | |
SST11CP16-QXCE-K | MICROCHIP |
获取价格 |
5.1-5.9 GHz High-Linearity Power Amplifier | |
SST11CP22 | MICROCHIP |
获取价格 |
5.1-5.9 GHz 802.11ac WLAN Power Amplifier | |
SST11CP22-GN | MICROCHIP |
获取价格 |
5.1-5.9 GHz 802.11ac WLAN Power Amplifier |