Datasheet > SST113-T2-E3

SST113-T2-E3

更新时间： 2024-11-17 05:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	71K
描述
Transistor

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SST113-T2-E3 数据手册

J/SST111 Series

Vishay Siliconix

N-Channel JFETs

J111 SST111

J112 SST112

J113 SST113

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

r_DS(on)Max (W)

I_D(off)Typ (pA)

t_ONTyp (ns)

–3 to –10

–1 to –5

v–3

J/SST111

J/SST112

J/SST113

100

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 111 < 30 W

D Fast Switching—t_ON: 4 ns

D Low Leakage: 5 pA

D Low Error Voltage

D Analog Switches

D Choppers

D High-Speed Analog Circuit Performance

D Negligible “Off-Error,” Excellent Accuracy

D Good Frequency Response, Low Glitches

D Eliminates Additional Buffering

D Sample-and-Hold

D Normally “On” Switches

D Current Limiters

D Low Capacitance: 3 pF

D Low Insertion Loss

DESCRIPTION

The J/SST111 series consists of all-purpose analog switches

designed to support a wide range of applications. The

J/SST113 are useful in a high-gain amplifier mode.

For similar products in TO-206AA(TO-18) packaging, see the

2N/PN/SST4391 series, 2N4856A/4857A/4858A, and

2N5564/5565/5566 (duals) data sheets.

The J series, TO-226AA (TO-92) plastic package, provides

low cost, while the SST series, TO236 (SOT-23) package,

provides surface-mount capability. Both the J and SST series

are available in tape-and-reel for automated assembly (see

Packaging Information).

TO-226AA (TO-92)

TO-236 (SOT-23)

Top View

SST111 (C1)*

SST112 (C2)*

SST113 (C3)*

Top View

J111

J112

J113

*Marking Code for TO-236

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V

Power Dissipation

(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Notes

a. Derate 2.8 mW/_C above 25_C

For applications information see AN105.

Document Number: 70232

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-1

12 3 4 5 6

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与SST113-T2-E3相关器件

型号	品牌	获取价格	描述	数据表
SST113T-2T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
SST113TT1	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,
SST113TT1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
SST113TT2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
SST113TT2	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236,
SST113TT2-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
SST114	CIT	获取价格	CIT SWITCH
SST11CP15	SST	获取价格	4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15E	MICROCHIP	获取价格	4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15-QUBE	MICROCHIP	获取价格	4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, 0.60 MM HEI

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