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SST113-SOT-23-3L-ROHS PDF预览

SST113-SOT-23-3L-ROHS

更新时间: 2024-11-16 19:57:31
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 256K
描述
Transistor,

SST113-SOT-23-3L-ROHS 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.61FET 技术:JUNCTION
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SST113-SOT-23-3L-ROHS 数据手册

 浏览型号SST113-SOT-23-3L-ROHS的Datasheet PDF文件第2页 
J/SST111 SERIES  
SINGLE N-CHANNEL JFET  
FEATURES  
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES  
LOW GATE LEAKAGE CURRENT  
5pA  
4ns  
FAST SWITCHING  
J SERIES  
SST SERIES  
SOT-23  
TOP VIEW  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
1
D
3
G
-55 to 150°C  
-55 to 150°C  
2
S
Junction Operating Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (J)3  
Continuous Power Dissipation (SST)3  
Maximum Currents  
360mW  
350mW  
Gate Current  
50mA  
Maximum Voltages  
Gate to Drain  
-35V  
-35V  
Gate to Source  
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
J/SST111  
J/SST112  
J/SST113  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
IG = -1µA, VDS = 0V  
MIN MAX MIN MAX MIN MAX  
BVGSS Gate to Source Breakdown Voltage  
VGS(off) Gate to Source Cutoff Voltage  
-35  
-3  
-35  
-1  
-35  
2
-10  
-1  
-5  
-1  
-3  
-1  
VDS = 5V, ID = 1µA  
V
VGS(F)  
IDSS  
IGSS  
IG  
ID(off)  
rDS(on)  
Gate to Source Forward Voltage  
Drain to Source Saturation Current2  
Gate Leakage Current  
0.7  
IG = 1mA, VDS = 0V  
VDS = 15V, VGS = 0V  
VGS = -15V, VDS = 0V  
VDG = 15V, ID = 1.0mA  
VDS = 5V, VGS = -10V  
VGS = 0V, VDS = 0.1V  
20  
5
mA  
nA  
pA  
nA  
Ω
-0.005  
-5  
Gate Operating Current  
Drain Cutoff Current  
0.005  
1
1
1
Drain to Source On Resistance  
30  
50  
100  
Linear Integrated Systems  
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 20119 06/15/13 Rev# A5 ECN#J SST 111  

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