Datasheet > SST113-SOT-23-3L-ROHS

SST113-SOT-23-3L-ROHS

更新时间： 2024-11-16 19:57:31

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	256K
描述
Transistor,

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技术参数
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SST113-SOT-23-3L-ROHS 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	FET 技术：	JUNCTION
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SST113-SOT-23-3L-ROHS 数据手册

浏览型号SST113-SOT-23-3L-ROHS的Datasheet PDF文件第2页

J/SST111 SERIES

SINGLE N-CHANNEL JFET

FEATURES

DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES

LOW GATE LEAKAGE CURRENT

5pA

4ns

FAST SWITCHING

J SERIES

SST SERIES

SOT-23

TOP VIEW

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 150°C

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation (J)³

Continuous Power Dissipation (SST)³

Maximum Currents

360mW

350mW

Gate Current

50mA

Maximum Voltages

Gate to Drain

-35V

Gate to Source

STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

J/SST111

J/SST112

J/SST113

SYM.

CHARACTERISTIC

TYP

UNIT CONDITIONS

I_G= -1µA, V_DS= 0V

MIN MAX MIN MAX MIN MAX

BV_GSSGate to Source Breakdown Voltage

V_GS(off)Gate to Source Cutoff Voltage

-35

-3

-35

-1

-35

-10

-1

-5

-1

-3

-1

V_DS= 5V, I_D= 1µA

V_GS(F)

I_DSS

I_GSS

I_G

I_D(off)

r_DS(on)

Gate to Source Forward Voltage

Drain to Source Saturation Current²

Gate Leakage Current

0.7

I_G= 1mA, V_DS= 0V

V_DS= 15V, V_GS= 0V

V_GS= -15V, V_DS= 0V

V_DG= 15V, I_D= 1.0mA

V_DS= 5V, V_GS= -10V

V_GS= 0V, V_DS= 0.1V

-0.005

-5

Gate Operating Current

Drain Cutoff Current

0.005

Drain to Source On Resistance

100

Linear Integrated Systems

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4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 20119 06/15/13 Rev# A5 ECN#J SST 111

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