是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | FET 技术: | JUNCTION |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST113T | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, | |
SST113T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
SST113-T1 | VISHAY |
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Transistor | |
SST113T-1T1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113T-1T2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113-T2-E3 | VISHAY |
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Transistor | |
SST113T-2T1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, | |
SST113TT1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |