是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.16 |
其他特性: | LOW INSERTION LOSS | 配置: | SINGLE |
最大漏源导通电阻: | 100 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST113T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
SST113-T1 | VISHAY |
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Transistor | |
SST113T-1T1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113T-1T2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113-T2-E3 | VISHAY |
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Transistor | |
SST113T-2T1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
SST113TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, | |
SST113TT1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A | |
SST113TT2 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |