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SST113-T1 PDF预览

SST113-T1

更新时间： 2024-11-16 19:57:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 52K
描述
Transistor

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中文翻译

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SST113-T1 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.77
Is Samacsys：NBase Number Matches：1

SST113-T1 数据手册

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J/SST111 Series  
Vishay Siliconix  
N-Channel JFETs  
J111 SST111  
J112 SST112  
J113 SST113  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max (W)  
ID(off) Typ (pA)  
tON Typ (ns)  
–3 to –10  
–1 to –5  
v–3  
30  
50  
5
5
5
4
4
4
J/SST111  
J/SST112  
J/SST113  
100  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 111 < 30 W  
D Fast Switching—tON: 4 ns  
D Low Leakage: 5 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response, Low Glitches  
D Eliminates Additional Buffering  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 3 pF  
D Low Insertion Loss  
DESCRIPTION  
The J/SST111 series consists of all-purpose analog switches  
designed to support a wide range of applications. The  
J/SST113 are useful in a high-gain amplifier mode.  
For similar products in TO-206AA(TO-18) packaging, see the  
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and  
2N5564/5565/5566 (duals) data sheets.  
The J series, TO-226AA (TO-92) plastic package, provides  
low cost, while the SST series, TO236 (SOT-23) package,  
provides surface-mount capability. Both the J and SST series  
are available in tape-and-reel for automated assembly (see  
Packaging Information).  
TO-226AA (TO-92)  
TO-236 (SOT-23)  
1
D
S
D
S
1
2
3
G
2
G
3
Top View  
SST111 (C1)*  
SST112 (C2)*  
SST113 (C3)*  
Top View  
J111  
J112  
J113  
*Marking Code for TO-236  
ABSOLUTE MAXIMUM RATINGS  
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V  
Power Dissipation  
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C  
16  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Notes  
a. Derate 2.8 mW/_C above 25_C  
For applications information see AN105.  
Document Number: 70232  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  
123456

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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A
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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A

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